View IRGS4615DPBF_7849721.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

=

=
irgb4615dpbf c e c g gce gate collector emitter e g n-channel c d 2 -pak IRGS4615DPBF
? appliance drives ? inverters ? ups features benefits low v ce(on) and switching losses high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability positive v ce(on) temperature coefficient and tighter distribution of parameters excellent current sharing in parallel operation 5 s short circuit soa enables short circuit protection scheme lead-free, rohs compliant environmentally friendly base part number package type orderable part number form quantity IRGS4615DPBF tube 50 IRGS4615DPBF irgs4615dtrrpbf tape and reel right 800 irgs4615dtrrpbf irgs4615dtrlpbf tape and reel left 800 irgs4615dtrlpbf irgb4615dpbf to-220ab tube 50 irgb4615dpbf standard pack d 2 pak absolute maximum ratings parameter max. units v ces collector-to-emitter breakdown voltage v i c @ t c = 25c continuous collector current i c @ t c = 100c continuous collector current i cm pulsed collector current, v ge = 15v i lm clamped inductive load current, v ge = 20v a i f @t c =25c diode continuous forward current i f @t c =100c diode continuous forward current i fm diode maximum forward current continuous gate-to-emitter voltage v transient gate-to-emitter voltage p d @ t c =25 maximum power dissipation w p d @ t c =100 maximum power dissipation t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw to-220 -40 to + 175 10lbf. in (1.1 n.m) 20 30 99 50 c 300 v ge 600 23 15 24 32 14 9 32 !"#$%&"' ("

!"#$%&"' (" notes: v cc = 80% (v ces ), v ge = 20v, l =100 h, r g = 47 . pulse width limited by max. junction temperature.

!"#$% $&
'#
(

)
*
(

)
(
+,-$%
)
,-$./) *

)
*0 )
thermal resistance parameter min. typ. max. units r ) . ) . ) . d 2 pak) ??? 40 ??? thermal resistance, junction-to-ambient ( socket mount: to-220) ??? 80 ??? r ja c/w electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c =100 a v (br)ces / . . / = = a ( 25 -175 o c ) ?1.551.85 i c = 8.0a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 1.95 ? v i c = 8.0a, v ge = 15v, t j = 150c ?2.00? i c = 8.0a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 250 a ) / . / = = a ( 25 -175 o c ) gfe forward transconductance ? 5.6 ? s v ce = 50v, i c = 8.0a, pw =80 a v ge = 0v,v ce = 600v ?400? v ge = 0v, v ce = 600v, t j =175c v fm ? 1.80 2.8 v i f = 8.0a ?1.30? i f = 8.0a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20 v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 19 ? i c = 8.0a q ge gate-to-emitter charge (turn-on) ? 5 ? nc v cc = 400v q gc gate-to-collector charge (turn-on) ? 8 ? v ge = 15v e on turn-on switching loss ? 70 ? i c = 8.0a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 145 ? jr g = 47 = = = ) = . = = = = ) = = . = = j r g = 47 = = = ) = . = = = = ) = = = = = = = = = = = = = = j t j = 175 o c trr diode reverse recovery time ? 60 ? ns v cc = 400v, i f = 8.0a irr peak reverse recovery current ? 14 ? a v ge = 15v, rg = 47 = = s pf conditions ? diode forward voltage drop collector-to-emitter leakage current scsoa short circuit safe operating area ? 5

!"#$%&"' (" fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 175c; v ce = 15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s fig. 3 - forward soa, t c = 25c; t j 175c 02468 v ce (v) 0 5 10 15 20 25 30 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 02468 v ce (v) 0 5 10 15 20 25 30 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 25 50 75 100 125 150 175 t c (c) 0 2 4 6 8 10 12 14 16 18 20 22 24 i c ( a ) 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 70 80 90 100 110 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 i c a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10 s 100 s tc = 25c tj = 175c single pulse dc 1ms

) !"#$%&"' (" fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. diode forward characteristics tp = 80 s fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 11 - typical v ce vs. v ge t j = 175c 02468 v ce (v) 0 5 10 15 20 25 30 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 4.0a i ce = 8.0a i ce = 16a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 4.0a i ce = 8.0a i ce = 16a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 4.0a i ce = 8.0a i ce = 16a 0 5 10 15 v ge (v) 0 5 10 15 20 25 30 35 i c e ( a ) t j = 25c t j = 175c 0.0 1.0 2.0 3.0 4.0 v f (v) 0 10 20 30 40 50 60 70 80 i f ( a ) -40c 25c 175c

!"#$%&"' (" fig. 13 - typ. energy loss vs. i c t j = 175c; l = 1mh; v ce = 400v, r g = 47 ; v ge = 15v. fig. 15 - typ. energy loss vs. r g t j = 175c; l = 1mh; v ce = 400v, i ce = 8a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l=1mh; v ce = 400v r g = 47 ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l=1mh; v ce = 400v i ce = 8a; v ge = 15v fig. 17 - typical diode i rr vs. i f t j = 175c fig. 18 - typical diode i rr vs. r g t j = 175c; i f = 8.0a 0 5 10 15 20 i c (a) 0 50 100 150 200 250 300 350 400 450 500 e n e r g y ( j ) e off e on 0 5 10 15 20 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 r g ( ) 0 50 100 150 200 250 300 350 e n e r g y ( j ) e on e off 0 25 50 75 100 125 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 5 10 15 20 i f (a) 0 5 10 15 20 25 30 i r r ( a ) r g = 100 r g = 10 r g = 22 r g = 47 0 25 50 75 100 125 r g ( ) 0 5 10 15 20 25 i r r ( a )

* !"#$%&"' (" fig. 20 - typical diode q rr v cc = 400v; v ge = 15v; t j = 175c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 8a; t j = 175c fig. 24 - typical gate charge vs. v ge i ce = 8a, l=600 h fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 22 - typ. v ge vs short circuit time v cc =400v, t c =25c fig. 21 - typical diode e rr vs. i f t j = 175c current (a) 0 500 1000 di f /dt (a/ s) 0 5 10 15 20 25 i r r ( a ) 0 500 1000 1500 di f /dt (a/ s) 0 200 400 600 800 1000 1200 1400 q r r ( n c ) 10 22 47 100 16a 8.0a 4.0a 0 5 10 15 20 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 8 10 12 14 16 18 v ge (v) 10 20 30 40 50 60 70 80 4 6 8 10 12 14 16 18 time ( s) 0 5 10 15 20 i f (a) 0 50 100 150 200 250 300 350 400 450 500 e n e r g y ( j ) 10 22 47 100 0 20 40 60 80 100 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres

!"#$%&"' (" 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) ri (c/w) ? ) . . . . . . j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri ri (c/w) ? ) . . . . . . j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri

+ !"#$%&"' (" fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit l rg 80 v dut 480v + - fig.c.t.5 - resistive load circuit fig.c.t.6 - typical filter circuit for v (br)ces measurement

, !"#$%&"' (" fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 wf.3- typ. reverse recovery waveform @ t j = 175c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 -100 0 100 200 300 400 500 -0.40 0.10 0.60 1.10 time( s) v ce (v) -5 0 5 10 15 20 25 e off loss 5% v ce 5% i ce 90% i ce tf -100 0 100 200 300 400 500 11.70 11.90 12.10 time ( s) v ce (v) -5 0 5 10 15 20 25 e on loss tes t 90% test t 10% test current 5% v ce tr -20 -15 -10 -5 0 5 10 15 -0.05 0.05 0.15 time ( s) i rr (a) peak i rr q rr t rr 10% peak i rr -100 0 100 200 300 400 500 -5.00 0.00 5.00 10.00 time ( s) v ce (v) -20 0 20 40 60 80 100 i ce (a) v ce i ce

!"#$%&"' (" to-220ab packages are not recommended for surface mount application.

international part number rect ifier lot code as s e mb l y logo year 0 = 2000 dat e code we e k 1 9 line c lot code 1789 example: t his is an irf 1010 note: "p" in as s embly line position i ndi cates "l ead - f r ee" in t he as s embly line "c" as s embled on ww 19, 2000

!"#$%&"' ("

dat e code year 0 = 2000 we e k 02 a = assembly site code rectifier int ernat ional part number p = designates lead - free product (opt ional) f530s in the assembly line "l" as s e mb l e d on ww 02, 2000 t his is an irf530s wit h lot code 8024 int ernat ional logo rectifier lot code assembly year 0 = 2000 part number dat e code line l we e k 0 2 or f530s logo as s e mb l y lot code

!"#$%&"' (" ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/
(dimensions are shown in millimeters (inches)) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

d 2 pak msl1 to-220 n/a qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level rohs compliant yes

▲Up To Search▲

Price & Availability of IRGS4615DPBF

	To Download IRGS4615DPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .